Semiconductor Equipment
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Si, SiC, GaN, GaAs bare wafer & epi wafer defect inspection
(Phys)- Model:NIR-PLuS
- Date:2023/7/25
- Email:sw@sellingware.com.tw
PL measurement is a non-contact, non-destructive measurement. Using PL can detect large-volume internal defects and impurities which cannot be detected by ordinary AOI equipment. Compared with general electrical measurement defects, PL has the advantages of fast speed, high resolution, and can be applied on both bare & Epi wafer inspection.
Si Slip Dislocation

GaAs PL defect map
Si晶片生長缺陷
SiC map before KOH
Si growth impurity / Slips