Si, SiC, GaN, GaAs bare wafer & epi wafer defect inspection

 PL measurement is a non-contact, non-destructive measurement. Using PL can detect large-volume internal defects and impurities which cannot be detected by ordinary AOI equipment. Compared with general electrical measurement defects, PL has the advantages of fast speed, high resolution, and can be applied on both bare & Epi wafer inspection.

Si Slip Dislocation